Spin relaxation and thermalization of excitons in GaAs quantum wells
- 29 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (17), 1902-1904
- https://doi.org/10.1063/1.105068
Abstract
We present results on the picosecond dynamics of spin relaxation and thermalization of excitons in GaAs quantum wells. The spin relaxation time constant is ≊50 ps for resonant excitation and less than 10 ps for nonresonant excitation, considerably shorter than those for free electrons in the bulk. Photoexcited cold, nonthermal excitons thermalize in ≊50 ps at 10 K and less than 10 ps at 35 K. Exciton-acoustic phonon energy exchange rates are determined from these measurements.Keywords
This publication has 17 references indexed in Scilit:
- Exciton dynamics of GaAs-AlXGa1−XAs quantum wells by picosecond time resolved photoluminescence spectroscopySuperlattices and Microstructures, 1989
- Transient optical alignment and relaxation of excitons in GaAsAlGaAs quantum wellsSuperlattices and Microstructures, 1989
- Linear and nonlinear optical properties of semiconductor quantum wellsAdvances in Physics, 1989
- The structure of amorphous hydrogenated silicon and its alloys: A reviewAdvances in Physics, 1989
- Spin-lattice relaxation inp-type gallium arsenide single crystalsPhysical Review B, 1988
- Variational calculation of polarization of quantum-well photoluminescencePhysical Review B, 1987
- Tuning of the valence-band structure of GaAs quantum wells by uniaxial stressPhysical Review Letters, 1987
- Optical dephasing of homogeneously broadened two-dimensional exciton transitions in GaAs quantum wellsPhysical Review B, 1986
- Infrared and polarization anomalies in the optical spectra of modulation-doped semiconductor quantum-well structuresPhysical Review Letters, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985