Laser-induced lateral epitaxial growth of silicon over silicon dioxide with locally varied encapsulation

Abstract

The effect and use of locally varied encapsulation thickness has been demonstrated in cw Ar laser- induced lateral epitaxial growth of silicon (Si) layers over silicon dioxide (SiO2) islands. The reflectivity of the laser light has been separately controlled in each region of the Si seed or the SiO2 island by changing the thicknesses of SiO2 and/or silicon nitride (Si3N4) caps. The technique essentially eliminates the surface ripples and thermal detachment of the laser-recrystallized Si layer, producing single crystalline layers over SiO2 islands as large as 15×80 μm and 20×40 μm.