Defects and laser action in GaAs diodes
- 1 May 1968
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 3 (3), 244-258
- https://doi.org/10.1007/bf00741957
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- Diffusion-Induced Defects in Silicon. IJournal of Applied Physics, 1967
- Orientation Effect in GaAs Injection LasersJournal of Applied Physics, 1966
- Misfit dislocations in semiconductorsJournal of Physics and Chemistry of Solids, 1966
- Thinning crystals of semiconducting compounds for transmission electron microscopyJournal of Scientific Instruments, 1966
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Spatial Distribution of Radiation from GaAs LasersJournal of Applied Physics, 1963
- Coherent light emission from p-n junctionsSolid-State Electronics, 1963
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963
- Onset of Stimulated Emission from Gallium Arsenide Semiconductor Optical MasersNature, 1963