Thinning crystals of semiconducting compounds for transmission electron microscopy
- 1 June 1966
- journal article
- Published by IOP Publishing in Journal of Scientific Instruments
- Vol. 43 (6), 371-373
- https://doi.org/10.1088/0950-7671/43/6/305
Abstract
Chemical thinning methods have been developed for CdS, GaAs, GaAsxP1-x, GaP, InSb and ZnS. Details of the techniques are given and some general features of the defects seen in the electron microscope are outlined.Keywords
This publication has 9 references indexed in Scilit:
- Polarity effects in III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1965
- Grain boundaries in the sphalerite structureJournal of Physics and Chemistry of Solids, 1964
- Direct observations of the geometry of defects in germaniumPhilosophical Magazine, 1963
- The chemical effects of ionizing radiation on non-metallic crystalsBritish Journal of Applied Physics, 1963
- Defects in the sphalerite structureJournal of Physics and Chemistry of Solids, 1962
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962
- Crystallographic Polarity in the II-VI CompoundsJournal of Applied Physics, 1962
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960
- Electron Microscope and Diffraction Study of Metal Crystal Textures by Means of Thin SectionsJournal of Applied Physics, 1949