Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer
- 16 March 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 22 (1), 349-355
- https://doi.org/10.1002/pssa.2210220141
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The growth of gallium arsenide films from a thin solution layer between substratesCrystal Research and Technology, 1973
- Structure and properties of transition layers formed in the epitaxy processPhysica Status Solidi (a), 1972
- The growth and properties of LPE GaAsSolid-State Electronics, 1972
- Doping gradients in layers of gallium phosphide grown by liquid epitaxyJournal of Materials Science, 1972
- Phase diagram, crystal growth, and band structure of InxGa1-xAsJournal of Physics and Chemistry of Solids, 1972