The growth of gallium arsenide films from a thin solution layer between substrates
- 1 January 1973
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 8 (10), 1103-1112
- https://doi.org/10.1002/crat.19730081002
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A new technique for liquid phase epitaxyJournal of Crystal Growth, 1970
- Constitutional supercooling in GaAs liquid phase epitaxyJournal of Crystal Growth, 1970
- Homogeneous solution grown epitaxial GaAs by tin dopingSolid-State Electronics, 1969
- Measurement of resistivity of silicon epitaxial layers by the three-point probe techniqueSolid-State Electronics, 1965