A Template Approach to Metal/III-V Semiconductor Epitaxy
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- a-axis oriented epitaxial YBa2Cu3O7−x-PrBa2Cu3O7−y heterostructuresApplied Physics Letters, 1990
- Stable and epitaxial metal/III-V semiconductor heterostructuresMaterials Science Reports, 1990
- Phase equilibria of GaNiAs at 600°C and the structural relationship between γ-Ni3Ga2, γ′-Ni13Ga9 and TNi3GaAsMaterials Science and Engineering B, 1989
- Metallurgical study of Ni/GaAs contacts. I. Experimental determination of the solid portion of the Ni-Ga-As ternary-phase diagramJournal of Applied Physics, 1989
- Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parametersJournal of Vacuum Science & Technology A, 1989
- Synthesis of ferromagnetic τ phase of Mn-Al films by sputteringJournal of Applied Physics, 1987
- Correlation between solid-state reaction and electrical properties of the Rh/GaAs Schottky contactJournal of Applied Physics, 1987
- Single-crystal-aluminum Schottky-barrier diodes prepared by molecular-beam epitaxy (MBE) on GaAsJournal of Applied Physics, 1978
- Molecular beam epitaxy of alternating metal-semiconductor filmsApplied Physics Letters, 1973
- On the Ferromagnetic Phase in Manganese-Aluminum SystemJournal of the Physics Society Japan, 1958