Compensation of p-type cast polycrystalline silicon by hydrogen ion implantation at 300 °C
- 15 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4), 376-378
- https://doi.org/10.1063/1.96171
Abstract
Hydrogen ion implantation used to passivate grain boundaries and intragrain defects can also compensate p‐type polycrystalline silicon within the implanted surface, when the implantation is done at 300 °C. This compensation may be explained by means of shallow acceptor neutralization.Keywords
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