Location of diffusion-doped gold atoms in silicon by means of channeling
- 1 June 1972
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 14 (3), 191-193
- https://doi.org/10.1080/00337577208231200
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Location of impurities in alkali halide crystals by channeling studiesSolid State Communications, 1971
- The use of channeling-effect techniques to locate interstitial foreign atoms in siliconRadiation Effects, 1971
- Dissociative Diffusion of Gold in SiliconJapanese Journal of Applied Physics, 1970
- Anomalously high yields of elastically scattered12C-ions from Zr, Hf, Tl, and Hg atoms implanted into siliconRadiation Effects, 1970
- Gold-Induced Climb of Dislocations in SiliconJournal of Applied Physics, 1960