Raman scattering study of disordering and alloying of GaAs-AlAs superlattice by As implantation and rapid thermal annealing

Abstract

Disordering and alloying of the GaAs‐AlAs superlattice by high‐dose implantation of As ions and rapid thermal annealing were studied by Raman scattering. It was found that the superlattice was disordered by ion implantation, and the spectrum of the resulting amorphous phase was identical to the spectrum of amorphous Al_xGa_1−xAs alloy. It consisted of GaAs‐ and AlAs‐type bands which had the same energies as corresponding bands in amorphous GaAs and AlAs. The ratio of intensities of the bands reflected the Al content. After annealing, the crystalline Al_xGa_1−xAs alloy was formed with composition dependent on actual thickness of the superlattice layers.