Implantation disordering of AlxGa1−xAs superlattices
- 15 July 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (2), 130-132
- https://doi.org/10.1063/1.96238
Abstract
Data are presented showing that layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures (QWH’s) or superlattices (SL’s) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity that diffuses (during annealing) via multiple sites, making column III sites available for Al‐Ga interchange, is most effective in layer disordering. However, any implanted ion is itself relatively effective in converting an AlxGa1−xAs‐GaAs QWH or SL to bulk‐crystal AlyGa1−yAs (0≤y≤x) via damage‐induced disordering.Keywords
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