High-power conversion efficiency quantum well diode lasers
- 26 October 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (17), 1318-1319
- https://doi.org/10.1063/1.98715
Abstract
Cw power conversion efficiencies of 57% have been obtained on uncoated diode lasers emitting nearly 300 mW per facet. This performance is achieved by using a low-resistance graded index separate confinement single quantum well AlGaAs/GaAs structure with high (84%) differential quantum efficiency and low threshold current.Keywords
This publication has 2 references indexed in Scilit:
- Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disorderingApplied Physics Letters, 1986
- High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxyApplied Physics Letters, 1985