Photoluminescence Investigation of Donor-Level Deepening in GaAs under Hydrostatic Pressure
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A), L612
- https://doi.org/10.1143/jjap.22.l612
Abstract
Hydrostatic pressure dependence of photoluminescence spectra in Se-doped GaAs has been measured at 1.5 K by using a diamond anvil cell up to 48 kbar. Two emission peaks due to bound-exciton annihilation and donor-acceptor recombination are observed under pressure. With increasing pressure the donor binding energy is found to become as deep as approximately 115 meV at 41 kbar where the crossover of the Γ1–X1 conduction band edges occurs.Keywords
This publication has 9 references indexed in Scilit:
- Uniaxial Stress and Temperature Dependences of Photoluminescence in GaAs1-xPxJapanese Journal of Applied Physics, 1983
- Diamond anvil cell and high-pressure physical investigationsReviews of Modern Physics, 1983
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBEJapanese Journal of Applied Physics, 1982
- Diamond-Anvil Cell Equipped with a Worm Gear Intensifier for Pressure Generation at Low TemperatureJapanese Journal of Applied Physics, 1982
- Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependencePhysical Review B, 1980
- Long-lifetime photoconductivity effect in n-type GaAlAsApplied Physics Letters, 1977
- Te and Ge — doping studies in Ga1−xAlxAsJournal of Electronic Materials, 1975
- Polariton Reflectance and Photoluminescence in High-Purity GaAsPhysical Review B, 1973
- Electrical Properties of the GaAsMinima at Low Electric Fields from a High-Pressure ExperimentPhysical Review B, 1970