Uniaxial Stress and Temperature Dependences of Photoluminescence in GaAs1-xPx
- 1 March 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (3R), 467
- https://doi.org/10.1143/jjap.22.467
Abstract
The uniaxial stress and temperature dependences of the photoluminescence in GaAs1-x P x (x≃0.38) are studied and three kinds of photoluminescence are observed. One of them is attributed to the surface anomaly and the other two to annihilation of the bound excitons and donor-acceptor pair recombination. By combining the results of the uniaxial stress effect and the temperature change of the photoluminescence, the transition mechanisms for the luminescence are discussed.Keywords
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