Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy
- 1 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 158 (4), 399-402
- https://doi.org/10.1016/0022-0248(95)00551-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surfaceApplied Physics Letters, 1995
- Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxyApplied Physics Letters, 1995
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978