Electronic structures of- and-silicon nitride
- 15 May 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (10), 5454-5463
- https://doi.org/10.1103/physrevb.23.5454
Abstract
The electronic energy bands of and phases of silicon nitride have been calculated using a first-principles orthogonalized linear combination of atomic orbitals method. The potential is constructed from a superposition of atomic charge densities. The basis functions are the atomiclike wave functions contracted from the site-decomposed atomiclike potentials. For , detailed studies of augmenting the basis functions with Si orbitals and additional single Gaussian orbitals for both Si and N atoms, and for the pressurized structure are also performed. The valence bands are composed of mainly N orbitals and the conduction bands are dominated by Si orbitals. It is found that the inclusion of Si orbitals in the basis has little effect on the valence-band structures, but changes conduction bands substantially. The electronic structure of under pressure up to 29.1 kbars has no appreciable difference from that of ordinary . Furthermore, the density of states of is very similar to that of . All these indicate that the electronic structure of silicon nitride is completely determined by the local short-range atomic structures.
Keywords
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