Hole mobility and transport in thin SiO2 films
- 15 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (8), 436-438
- https://doi.org/10.1063/1.88200
Abstract
The first measurement of the hole mobility and its temperature dependence in thermally grown SiO2 on Si is reported and found to follow μ≃20 exp(−0.6e V/k T) cm2/V sec. In agreement with previous studies, the energy required to form an electron−hole pair with ionizing radiation is found to be field dependent and at very high fields is in the range of 18 eV/electron−hole pair, and is nearly temperature independent from 77 to 370 °K.Keywords
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