Interband transitions in molecular-beam-epitaxial AlxGa1−xAs/GaAs
- 1 July 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1), 495-498
- https://doi.org/10.1063/1.335652
Abstract
Interband transition energies for AlxGa1−xAs layers grown by molecular‐beam epitaxy (MBE) techniques have been determined using the electrolyte electroreflectance (EER) technique. The observed data fit quadratic relations for E0, E0+Δ0, E1 and E1+Δ1 to describe variations of energy with composition. Although the x values were not accurately known, the internal consistency of the data is excellent. Given a single bowing parameter we show that accurate values of x can be determined. The EER technique can provide x values with an accuracy better than 0.02 and information on changes in x as small as 0.002. It is thus ideally suited for studying MBE materials.Keywords
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