Mass and energy dependence of implanted ion profiles in the AZ111 photoresist
- 15 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (4), 1322-1324
- https://doi.org/10.1063/1.337304
Abstract
Profiles of Bi, Xe, Sn, Kr, Ga, Fe, K, Ar, P, Na, and F implanted into the AZ111 photoresist are compared with recent theoretical predictions. With the exception of the noble gases and F, the experimental results are well fitted by the Biersack–Haggmark [Nucl. Instrum. Methods 174, 257 (1980)] Monte Carlo calculations. For the noble gases we obtain ranges up to a factor of 2 shorter than the above predictions. Fluor changes the profile as function of energy, being nearly Gaussian at 30 keV and distributing according to the calculated ionization at 70 keV.Keywords
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