Range profiles of implanted Bi and Au in amorphous silicon
- 1 February 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (3), 453-458
- https://doi.org/10.1016/0168-583x(85)90002-3
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Accurate RBS determination of the range profile of implanted bismuth in siliconNuclear Instruments and Methods in Physics Research, 1982
- Refined universal potentials in atomic collisionsNuclear Instruments and Methods in Physics Research, 1982
- Z1 oscillations in low energy heavy ion rangesNuclear Instruments and Methods, 1980
- Backscattering measurements of implanted ion distributions in double-layer structuresJournal of Applied Physics, 1980
- Z1-oscillations in low-energy heavy-ion rangesNuclear Instruments and Methods, 1980
- Ranges and range theoriesRadiation Effects, 1980
- The Range of 120 keV Ions in SolidsIEEE Transactions on Nuclear Science, 1979
- Range of heavy ions implanted into solids as measured by He ion backscatteringNuclear Instruments and Methods, 1976
- The application of high resolution rutherford backscattering to the measurement of ion ranges in Si and AlRadiation Effects, 1975
- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971