Cyclotron resonance investigations in GaInAs(P)/InP heterojunctions grown by low-pressure metal-organic chemical vapour deposition
- 1 October 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (10), 695-699
- https://doi.org/10.1088/0268-1242/2/10/013
Abstract
The authors report the study of the cyclotron resonance spectrum of a two-dimensional electron gas at the Ga0.47In0.53As/InP interface, grown by low-pressure metal-organic chemical vapour deposition. Quantum oscillations that are clear consequences of the two dimensionality of the system have been evidenced in the region of cyclotron resonance. By tilting the sample, a second absorption peak added to the normal cyclotron resonance has been observed; it has been connected with the fact that two electric sub-bands were occupied at the heterojunction.Keywords
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