Build-up and annealing of damage induced by ion and electron beams at SiO2 surfaces: An AES study
- 1 January 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 37 (1), 63-77
- https://doi.org/10.1016/0169-4332(89)90974-4
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Oxidation under electron bombardment a tool for studying the initial states of silicon oxidationPhilosophical Magazine Part B, 1987
- Build-up and annealing of damage produced by low-energy argon ions at Si(lll) surfaceRadiation Effects, 1987
- Investigation of the silica surface via electron-energy-loss spectroscopyPhysical Review B, 1979
- Detection of SiO2 at the indium tin oxide/Si solar cell interfaceJournal of Applied Physics, 1979
- SiO2 surface defect centers studied by AESSurface Science, 1978
- Observation of an intermediate chemical state of silicon in the Si/SiO2 interface by Auger sputter profilingApplied Physics Letters, 1978
- Effects of ion sputtering on semiconductor surfacesSurface Science, 1978
- A study of the charging and dissociation of SiO2 Surfaces by AESSurface Science, 1977
- An Auger analysis of the SiO2-Si interfaceJournal of Applied Physics, 1976
- Electron-irradiation effect in the Auger analysis of SiO2Journal of Applied Physics, 1974