Theory of optical transitions in inversion layers of narrow-gap semiconductors
- 10 January 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (1), 229-240
- https://doi.org/10.1088/0022-3719/16/1/025
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Subband Structures of N-Channel Inversion Layers on III–V Compounds –A Possibility of the Gate Controlled Gunn Effect–Journal of the Physics Society Japan, 1977
- Quantized Surface States of a Narrow-Gap SemiconductorJournal of the Physics Society Japan, 1974
- Spin magnetic moment and spin resonance of conduction electrons in α‐Sn‐type semiconductorsPhysica Status Solidi (b), 1971
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955