Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSb
- 15 November 1980
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 49 (5), 1851-1858
- https://doi.org/10.1143/jpsj.49.1851
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Effective-mass approximation in the presence of an interfacePhysical Review B, 1979
- Spectroscopy of electron subband levels in an inversion layer on InSbSolid State Communications, 1977
- Subband Structures of N-Channel Inversion Layers on III–V Compounds –A Possibility of the Gate Controlled Gunn Effect–Journal of the Physics Society Japan, 1977
- Contributed PapersAmerican Journal of Agricultural Economics, 1976
- Comments on the hole mass in silicon inversion layersSolid State Communications, 1976
- Cyclotron Resonance in an n-Type Inversion Layer on Hg1-xCdxTe AlloyJournal of the Physics Society Japan, 1976
- Surface cyclotron resonance in InSbSolid State Communications, 1975
- Magnetoconductance Oscillations of-Type Inversion Layers in InSb SurfacesPhysical Review B, 1972
- Energy-Band Structure of Germanium and Silicon: The k·p MethodPhysical Review B, 1966
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957