Electroreflectance measurements of melt-doped and ion-implanted GaAs

Abstract

Electroreflectance (ER) is used to detect shallow impurity levels in GaAs doped with Si, Te, Zn, and Cd impurities. The ER of Si‐doped GaAs as a function of doping concentration shows that the impurity band merges with the conduction band when the concentration is ∼5×10¹⁶ cm³. Ion‐implanted samples of GaAs are monitored with electroreflectance to detect annealing stages and impurity substitution. The Te, S, Zn, and Cd ion‐implanted impurities are detected and compared to the melt‐doped samples. Several advantages of using electroreflectance rather than other detection methods are discussed.