Amorphous clusters I. Electronic structure of Si clusters with N, P and As dopants
- 1 January 1992
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 143, 232-240
- https://doi.org/10.1016/s0022-3093(05)80571-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Impurity-defect complexes and doping mechanism ina-Si:HPhysical Review Letters, 1991
- A cluster calculation of group IV impurities in Si and GeJournal of Non-Crystalline Solids, 1989
- Electronic structure of substitutional oxygen in siliconSolid State Communications, 1989
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon filmsApplied Physics Letters, 1985
- Chapter 3 Optical Properties of Defect States in a-Si: HPublished by Elsevier ,1984
- Density of the gap states in undoped and doped glow discharge a-Si:HSolar Energy Materials, 1983
- CNDO approach to amorphous silicon and to hydrogenated and fluorinated amorphous siliconPhysical Review B, 1983
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Substitutional doping of amorphous siliconSolid State Communications, 1975