Subthreshold current in MODFETs of tenth-micrometer gate
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (1), 63-65
- https://doi.org/10.1109/55.46932
Abstract
The subthreshold current of conventional GaAs/AlGaAs MODFETs and pseudomorphic InGaAs/AlGaAs MODFETs with the gate length down to 0.12 mu m is investigated. The gate swing increases with the drain voltage and decreases with the gate length. It is attributed to charge injection from source to drain, limited by the channel potential barrier, which is a function of both the drain and the gate voltages. The pseudomorphic InGaAs/AlGaAs MODFETs show much better control than the conventional GaAs/AlGaAs MODFETs for the subthreshold current, especially with high drain biases. This shows that the pseudomorphic quantum-well structures can suppress the subthreshold current passing through the GaAs buffer region and reduce the undesirable short-channel effects.<>Keywords
This publication has 6 references indexed in Scilit:
- Short channel effects in submicron self-aligned gate heterostructure field effect transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTsIEEE Transactions on Electron Devices, 1989
- Subthreshold and near-threshold conduction in GaAs/AlGaAs MODFETsIEEE Transactions on Electron Devices, 1989
- 0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHzElectronics Letters, 1988
- Beyond-punchthrough current in GaAs MESFET'sIEEE Electron Device Letters, 1986
- VLSI limitations from drain-induced barrier loweringIEEE Transactions on Electron Devices, 1979