The Energy Dependence of Lattice Disorder in Ion‐Implanted Silicon
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 35 (1), 269-275
- https://doi.org/10.1002/pssb.19690350126
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONSApplied Physics Letters, 1969
- Substitutional doping during low-dose implantation of Bi and Ti ions in Si at 25°CRadiation Effects, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967
- Conversion of crystalline germanium to amorphous germanium by ion bombardmentPhilosophical Magazine, 1965
- Disordering of Solids by Neutron RadiationPhysical Review B, 1955
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955