Implantation of carbon to stabilize TiSi2 during thermal annealing
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 598-602
- https://doi.org/10.1016/s0168-583x(87)80120-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Interaction of TiSi2 layers with polycrystalline SiApplied Physics Letters, 1986
- Application of ion implantation to wear protection of materialsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Impurity effects in transition metal silicidesJournal of Vacuum Science & Technology B, 1984
- Kinetics of TiSi2 formation by thin Ti films on SiJournal of Applied Physics, 1983
- Recrystallization of Polycrystalline CVD Grown SiliconJournal of the Electrochemical Society, 1980
- Interaction of metal layers with polycrystalline SiJournal of Applied Physics, 1976
- Interaction of Al layers with polycrystalline SiJournal of Applied Physics, 1975
- Recrystallization processes in polycrystalline siliconApplied Physics Letters, 1975