Recrystallization processes in polycrystalline silicon
- 15 May 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (10), 569-571
- https://doi.org/10.1063/1.87995
Abstract
Recrystallization processes in polycrystalline silicon made by a chemical vapor deposition technique have been investigated. Primary recrystallization has been observed between 1150 and 1250 °C, secondary recrystallization occurred above 1350 °C. By this procedure, grains of about 100 μm have been obtained. Recrystallized silicon can in principle be used as a substrate for making relatively inexpensive solar cells.Keywords
This publication has 3 references indexed in Scilit:
- Epitaxial silicon p-n junctions on polycrystalline ``ribbon'' substratesApplied Physics Letters, 1974
- Solar Power: Promising New DevelopmentsScience, 1974
- Chemical Vapor Deposited Polycrystalline SiliconJournal of the Electrochemical Society, 1972