Optical and photoluminescence properties of a-Si1−x N x : H/a-Si3N4: H and a-Si1−x C x : H/a-SiC: H superlattices
- 27 September 1997
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 76 (3), 287-298
- https://doi.org/10.1080/01418639708241094
Abstract
Superlattices based on wide-bandgap hydrogenated amorphous silicon based alloys were studied in terms of optical absorption and photo-luminescence properties. A critical comparison between a-Si1−x N x : H/a-Si3N4: H and a-Si1−x C x : H/a-SiC: H multilayers was made, revealing the former as a promising structure for electroluminescent devices in the visible range. As evidence of this potentiality, a light-emitting device was realized using an a-Si1−x N x : H/a-Si3N4: H multilayer as the radiative element.Keywords
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