Electronic conductivity of Si(111)-7×7
- 15 October 1986
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (8), 5916-5917
- https://doi.org/10.1103/physrevb.34.5916
Abstract
Recent electron-energy-loss measurements on Si(111)-7\times\else\texttimes\fi{}7 have been analyzed to obtain the temperature-dependent surface resistivity, which is found to take the form \ensuremath{\rho}=${\ensuremath{\rho}}_{0}$+\ensuremath{\alpha}T where T is the temperature and \ensuremath{\alpha}\ensuremath{\approxeq}174 \ensuremath{\Omega}/K.Keywords
This publication has 8 references indexed in Scilit:
- Strain-induced metal-insulator transition of the Ge(111) surfacePhysical Review B, 1986
- Surface states and reconstruction on Ge(001)Physical Review B, 1985
- Long-Range Quasielastic Scattering of Low-Energy Electrons by Conduction-Band Surface Plasmons on Si(111)7×7Physical Review Letters, 1985
- Inelastic scattering of slow electrons from Si(111) surfacesPhysical Review B, 1984
- Metal-Insulator Transition on the Ge(001) SurfacePhysical Review Letters, 1984
- Temperature-Dependent Surface States and Transitions of Si(111)-7×7Physical Review Letters, 1983
- Evidence for a 2D-metallic state of the clean 7 × 7 Si(111) surfaceSolid State Communications, 1981
- Electronic structure of the annealed Ge(111) and Si(111) surfaces: Similarities in local bondingPhysical Review B, 1981