Strain-induced metal-insulator transition of the Ge(111) surface
- 15 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (6), 4421-4423
- https://doi.org/10.1103/physrevb.33.4421
Abstract
The Ge(111) surface was observed to be metallic under compressive strain, while normally it is semiconducting in the fully annealed state. The compressive strain was produced by the lattice mismatch between Ge and Si for epitaxial Ge films on Si(111). When the strain is relieved, the metallic surface becomes semiconducting.Keywords
This publication has 7 references indexed in Scilit:
- 7×7 Reconstruction of Ge(111) Surfaces under Compressive StrainPhysical Review Letters, 1985
- Angle-resolved photoemission studies of Ge(111)-c(2×8), Ge(111)-(1×1)H, Si(111)-(7×7), and Si(100)-(2×1)Physical Review B, 1985
- Tunneling Images of Germanium Surface Reconstructions and Phase BoundariesPhysical Review Letters, 1985
- Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfacesSurface Science, 1984
- Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloysSurface Science, 1984
- Rheed study on the Ge/Si(111) and Si/Ge(111) systems: Reaction of Ge with the Si(111)(7 × 7) surfaceSurface Science, 1984
- Electronic structure of Ge(111) and Ge(111): H from angle-resolved-photoemission measurementsPhysical Review B, 1982