Nanoscale Evaluation of Structure and Surface Potential of Gated Field Emitters by Scanning Maxwell-Stress Microscope

Abstract

Both the structural and surface potential images of gated field emitters (GFEs) were measured using a scanning Maxwell-stress microscope (SMM) in air. Si cone-shaped and Mo disk-edge GFEs were measured. The experimental results clearly revealed differences in the surface potential for various materials and irregularities in the GFE structures which were too small to be found by conventional scanning electron microscope observations. It was also found that the surface potential of Si was rather flat even in the emitter tip apex.