Surface space-charge dynamics and surface recombination on silicon (111) surfaces measured with combined laser and synchrotron radiation
- 5 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (10), 1158-1161
- https://doi.org/10.1103/physrevlett.64.1158
Abstract
The results of a new experiment, which records transient, pulsed-laser-induced surface photovoltages by following photoemission shifts measured with synchrotron radiation, are reported. Comparison of the surface photovoltage decays with numerical simulations reveals large surface recombination rates for a variety of Si(111) surface preparations. The space-charge layer near the surface is found to govern the surface and bulk carrier concentrations to a remarkable extent, particularly when band bending is large.Keywords
This publication has 11 references indexed in Scilit:
- Surface Recombination on the Si(111) 2×1 SurfacePhysical Review Letters, 1989
- Schottky-barrier heights of single-crystalon Si(111): The effect of a surfacep-njunctionPhysical Review B, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Photoemission-Based Photovoltage Probe of Semiconductor Surface and Interface Electronic StructurePhysical Review Letters, 1986
- Determination of the Fermi-level pinning position at Si(111) surfacesPhysical Review B, 1983
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Effect of surface recombination on the transient decay of excess carriers produced by short wavelength laser pulsesSolid-State Electronics, 1982
- Secondary illumination effects in the photoemission spectra of GaAs and CdSSolid State Communications, 1980
- Large-Signal Surface Photovoltage Studies with GermaniumPhysical Review B, 1958
- Measurements of the recombination velocity at germanium surfacesPhysica, 1954