Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (2), 283-291
- https://doi.org/10.1109/16.121684
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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