Design of a safe facility for the metalorganic chemical vapor deposition of high-purity GaAs and AlGaAs
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3), 101-107
- https://doi.org/10.1016/0022-0248(86)90289-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- A MOCVD reactor safety system for a production environmentJournal of Crystal Growth, 1984