The Thermal Stability of Indium-Tin-Oxide/n-GaAs Schottky Contacts
- 16 September 1992
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 133 (1), 77-93
- https://doi.org/10.1002/pssa.2211330110
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Schottky diode properties and the photovoltaic behaviour of indium tin oxide (ITO)/n-GaAs junctions-effect of arsenic deficient GaAs surfaceSemiconductor Science and Technology, 1990
- A Low-Cost Ion Assisted Evaporation Technique for AuGe/n-GaAs Contact FabricationPhysica Status Solidi (a), 1990
- Refractory and silicide gate metallisations for GaAs MESFET'sApplied Surface Science, 1989
- Indium tin oxide/gallium arsenide solar cellsJournal of Applied Physics, 1985
- Transparent conductors—A status reviewThin Solid Films, 1983
- Si and GaAs SIS Heterostructure Solar Cells Using Spray-Deposited ITOJapanese Journal of Applied Physics, 1980
- X-ray photoemission spectroscopy studies of Sn-doped indium-oxide filmsJournal of Applied Physics, 1977
- The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—II Terminal characteristicsSolid-State Electronics, 1976
- The effects of radiation damage on the properties of Ni-nGaAs Schottky diodes—I: Characterisation of defect levelsSolid-State Electronics, 1976
- Outmigration of gallium from Au-GaAs interfacesElectronics Letters, 1975