Photo-oxidation of silicon monoxide to silicon dioxide with pulsed far-ultraviolet (193 nm) laser radiation
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11), 1026-1027
- https://doi.org/10.1063/1.94216
Abstract
Silicon monoxide films (1000–5000 Å thick) are converted to silicon dioxide when irradiated in air with pulses (∼15 n half-width) of 193-nm radiation (40–110 mJ/cm2) from an excimer laser. The quantum efficiency of the process has a minimum value of 0.014.Keywords
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