A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxy
- 15 February 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (4), 311-312
- https://doi.org/10.1063/1.91474
Abstract
By using a single Knudsen source independently to generate molecular beams of As2 and As4 from elemental arsenic, a direct correlation has been observed between the arsenic species used and deep level concentrations in molecular beam epitaxy grown n‐type GaAs films. Some preliminary observations on comparative growth temperature effects and Ge site occupancy are also reported.Keywords
This publication has 10 references indexed in Scilit:
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Surface processes controlling the growth of GaxIn1−xAs and GaxIn1−xP alloy films by MBEJournal of Crystal Growth, 1978
- Temperature range for growth of autoepitaxial GaAs films by MBEJournal of Crystal Growth, 1978
- Interaction kinetics of As2 and Ga on {100} GaAs surfacesSurface Science, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam techniqueSurface Science, 1975
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Sticking probability of diatomic moleculesSurface Science, 1974
- P-N Junction Formation during Molecular-Beam Epitaxy of Ge-Doped GaAsJournal of Applied Physics, 1971