Formation of interfacial dislocation network in surfactant mediated growth of Ge on Si(111) investigated by Spa-Leed: Part I
- 10 December 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 298 (1), 29-42
- https://doi.org/10.1016/0039-6028(93)90077-w
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)Surface Science, 1993
- Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kineticsSurface Science, 1992
- Lattice mismatch accommodation atGeSi/{111}Si interfaces grown by liquid phase epitaxyPhysica Status Solidi (a), 1992
- The influence of surfactants on growth modes in molecular-beam epitaxy: The growth of germanium layers on Si(100)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Thermal roughness of the homogeneous and inhomogeneous Cu(311) surface studied by high-resolution low-energy electron diffractionPhysical Review B, 1991
- Strain-relief mechanism in surfactant-grown epitaxial germanium films on Si(111)Physical Review B, 1991
- Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopyApplied Physics Letters, 1991
- Defect self-annihilation in surfactant-mediated epitaxial growthPhysical Review Letters, 1991
- Influence of surfactants in Ge and Si epitaxy on Si(001)Physical Review B, 1990
- Microstructure and strain relief of Ge films grown layer by layer on Si(001)Physical Review B, 1990