Interface-state generation during avalanche injection of electrons from Si into SiO2

Abstract

We have studied at both liquid‐nitrogen temperature and room temperature the development of the interface states that are generated in the Si‐SiO₂ system when electrons are avalanche injected from the Si into the SiO₂. Differences in development at the two temperatures indicate that the states are of two types. One appears immediately at liquid‐nitrogen temperature and is probably identical with the states previously found to occur as the result of photoinjecting electrons through the interface. The other requires thermal energy to develop. These states may be associated with positive charge trapped at the interface and are probably related to those observed after radiation damage.