Dependence of Interface-State Buildup on Hole Generation and Transport in Irradiated MOS Capacitors
- 1 January 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 23 (6), 1580-1585
- https://doi.org/10.1109/tns.1976.4328543
Abstract
No abstract availableKeywords
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