Free-carrier absorption of n-type ZnSe : Al

Abstract
Free‐carrier‐absorption measurements of ZnSe : Al annealed under Zn‐rich conditions are reported. The absorption is nearly temperature independent, linear in carrier density, and shows a ν−3 behavior. The experimental results are compared with calculations based on polar optical‐mode scattering. The agreement is reasonable except for the small temperature dependence observed in the experimental absorption. The conclusions are very similar to those reached previously for CdTe : Al.