Optical properties of highly excited ZnSe/ZnSxSe1-xmultiple-quantum-well structures
- 1 May 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (5), 681-685
- https://doi.org/10.1088/0268-1242/7/5/011
Abstract
Optical properties of highly excited II-VI multiple quantum-well structures are investigated by means of photoluminescence, reflectivity and Raman scattering techniques. Experimental evidence of exciton-electron and exciton-exciton scattering processes in the range between I0 and 100 K is reported.Keywords
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