Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxy
- 1 October 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (7), 3071-3074
- https://doi.org/10.1063/1.339352
Abstract
We report the first operation of molecular-beam epitaxy (MBE) grown ZnSe/ZnSxSe1−x superlattice electron beam pumped lasers in the temperature range 100–300 K and the first room-temperature operation of MBE grown ZnSe on GaAs transverse geometry electron beam pumped lasers. Threshold current densities of 2.5 A/cm2 at 100 K were achieved by both devices. At room temperature, threshold current was 5 A/cm2 for the ZnSe devices and 12 A/cm2 for the superlattice.Keywords
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