Damage formation and substitutionality in 75As++-implanted diamond

Abstract

Rutherford backscattering spectrometry (RBS) has been used to study damage formation and substitutionality in synthetic diamonds implanted with 250‐keV ⁷⁵As⁺⁺ at either 600 °C or room temperature. Lattice damage following implantation at 600 °C was substantially less than damage following room‐temperature implantation and appears to be composed of a higher fraction of extended defects. A significant portion of the As implanted at 600 °C was found to be in substitutional lattice sites with substitutional fractions as high as 50%. Changing the ion flux by three orders of magnitude during high‐temperature implantation had no effect on either residual damage or substitutionality as indicated by the RBS analysis.