Ballistic-hole spectroscopy of interfaces
- 15 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (12), 7663-7666
- https://doi.org/10.1103/physrevb.42.7663
Abstract
A new technique allows direct control and measurement of ballistic-hole transport through interfaces. This novel spectroscopy has been applied to determine the detailed properties of hole transmission through metal-semiconductor interfaces and probe the valence-band structure of subsurface semiconductor heterostructures. The ballistic-hole probe is created by electron-tunneling-microscopy methods and provides high-spatial-resolution capabilities.Keywords
This publication has 9 references indexed in Scilit:
- Ballistic-electron-emission microscopy investigation of Schottky barrier interface formationApplied Physics Letters, 1989
- Observation of Interface Band Structure by Ballistic-Electron-Emission MicroscopyPhysical Review Letters, 1988
- Direct investigation of subsurface interface electronic structure by ballistic-electron-emission microscopyPhysical Review Letters, 1988
- Reliable and versatile scanning tunneling microscopeReview of Scientific Instruments, 1988
- Tunneling spectroscopy of the Si(111)2 × 1 surfaceSurface Science, 1987
- Semiconductor InterfacesSpringer Proceedings in Physics, 1987
- Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling MicroscopyPhysical Review Letters, 1986
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- Mean Free Path of Hot Electrons and Holes in MetalsPhysical Review Letters, 1963