Measurement of the chromium concentration in semi-insulating GaAs using optical absorption
- 1 January 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (1), 467-471
- https://doi.org/10.1063/1.325635
Abstract
Chromium has been observed to be responsible for a band of absorption in semi‐insulating GaAs. The corresponding absorption coefficient has been carefully calibrated using three different chemical analysis methods. It is shown that the spatial distributions of Cr in semi‐insulating GaAs ingots can be obtained very easily using optical absorption measurements and that the segregation coefficient of Cr in GaAs is equal to 8.9×10−4. The nature of the optical transitions due to the presence of Cr is discussed in detail and it is shown that they occur mainly on the Cr3+ in semi‐insulating material.Keywords
This publication has 12 references indexed in Scilit:
- Electrical compensation in semi-insulating gallium arsenideJournal of Physics C: Solid State Physics, 1978
- Wave functions and optical cross sections associated with deep centers in semiconductorsPhysical Review B, 1977
- EPR ofin GaAs—evidence for strong Jahn-Teller effectsPhysical Review B, 1977
- Hole traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Temperature dependence of ionization energies of deep bound states in semiconductorsJournal de Physique Lettres, 1977
- Entropy of ionization and temperature variation of ionization levels of defects in semiconductorsPhysical Review B, 1976
- Optical absorption on localized levels in gallium arsenidePhysical Review B, 1974
- Optical Absorption in Chromium Doped, High Resistivity GaAs in the 0.6 to 1.5 ev RangeJournal of the Electrochemical Society, 1966
- On the photoionization of deep impurity centers in semiconductorsSolid State Communications, 1965
- Refractive Index of GaAsJournal of Applied Physics, 1964