Temperature dependence of ionization energies of deep bound states in semiconductors
- 1 January 1977
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 38 (1), 41-43
- https://doi.org/10.1051/jphyslet:0197700380104100
Abstract
We explain that the temperature coefficient of the ionization energy of a deep level can be determined from measurements of carrier emission rate and capture rate, using transient capacitance techniques such as DLTS. Two electron traps and three hole traps in GaAs are examined as an illustration. One of the hole traps appears to be strongly pinned to the conduction bandKeywords
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